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| SHINDENGEN General Purpose Rectifiers iLow Noise Bridges LN4SB60 600V 4A FEATURES *oe noise Low *oe Package SIL *oe High IFSM APPLICATION OUTLINE DIMENSIONS Case : 3S (Unit : mm) *oe power supply Switching *oe Home (Electrical) Appliances *oe Office Equipment, Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 600 V IO Average Rectified Forward Current 50Hz sine wave, R-load With heatsink*@ Tc=111*Z 4.0 A 50Hz sine wave, R-load Without heatsink Ta=25*Z 2.5 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25*Z A 150 Repetitive Peak Surge Reverse Power PRRSM Pulse width 10Es, Rating of per diode, Tj=25*Z 2 kW I2t 1ms*...t*10ms Tj=25*Z A2 s Current Squared Time 50 Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque*0.5Nm) F 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF I =2A, Pulse measurement, Rating of per diode Max. 0.95 V F Reverse Current IR V=V Pulse measurement, Rating of per diode Max. 10 EA R RM, Reverse Recovery Time =0.1A, Rating of per diode trr I =0.1A, RI F Max.* 5 Es @ AEjc junction to case With heatsink Max. 5.5 Thermal Resistance Without heatsink AEjl junction to lead Max. 6 *Z/W AEja junction to ambient Without heatsink Max. 30 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd LN4SB60 Forward Voltage 10 Forward Current IF [A] Tc=150C [TYP] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] LN4SB60 10 Forward Power Dissipation Forward Power Dissipation PF [W] 8 SIN 6 4 2 0 0 1 2 3 4 5 6 Average Rectified Forward Current IO [A] Tj = 150C Sine wave LN4SB60 6 Derating Curve Average Rectified Forward Current IO [A] 5 SIN 4 3 2 Heatsink Tc Tc 1 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] Sine wave R-load with heatsink LN4SB60 4 Derating Curve Average Rectified Forward Current IO [A] 3.5 PCB 3 SIN 2.5 2 1.5 1 0.5 0 Soldering land 5mm 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 600V Sine wave R-load Free in air IO 0 0 VR tp D=tp /T T LN4SB60 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=25C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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